Technical Specifications
Parameters and characteristics for this part
| Specification | STGD18N40LZT4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 25 A |
| Current - Collector Pulsed (Icm) | 40 A |
| Gate Charge | 29 nC |
| Grade | Automotive |
| Input Type | Logic |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Qualification | AEC-Q101 |
| Supplier Device Package | DPAK |
| Td (on/off) @ 25°C | 650 ns, 13.5 µs |
| Test Condition | 5 V, 300 V, 10 A |
| Vce(on) (Max) @ Vge, Ic | 1.7 V |
| Voltage - Collector Emitter Breakdown (Max) | 420 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGD18N40LZT4 Series
This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.
Documents
Technical documentation and resources