IXFK21N100F

Obsolete

IXYS

MOSFET N-CH 1000V 21A TO264

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 1000V 21A TO264

Technical Specifications

Parameters and characteristics for this part

Specification	IXFK21N100F

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	TO-264AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5.5 V

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Technology	FET Type	Vgs(th) (Max) @ Id
IXYS IXFK21N100F	Through Hole	-55 °C	150 °C	TO-264-3 TO-264AA	1000 V	21 A	10 V	500 W	160 nC	5500 pF	500 mOhm	20 V	TO-264AA	MOSFET (Metal Oxide)	N-Channel	5.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1000 V 21A (Tc) 500W (Tc) Through Hole TO-264AA

Technical documentation and resources

No documents available