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SOT1118

PBSS4112PAN,115

Active
Nexperia USA Inc.

120 V, 1 A NPN/NPN LOW VCESAT (BISS) TRANSISTOR

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SOT1118

PBSS4112PAN,115

Active
Nexperia USA Inc.

120 V, 1 A NPN/NPN LOW VCESAT (BISS) TRANSISTOR

Find alt

Description

General part information

PBSS4112 Series

NPN/NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP.

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4112PAN,115
Current - Collector (Ic) (Max)1 A
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)60
Frequency - Transition120 MHz
GradeAutomotive
Mounting TypeSurface Mount
NPN Count2
Operating Temperature150 °C
Package / Case6-UFDFN Exposed Pad
Package Length2 mm
Package Name6-HUSON
Package Width2 mm
Power - Max510 mW
QualificationAEC-Q100
Transistor ConfigurationDual
Transistor TypeNPN
Vce Saturation (Max)120 mV
Voltage - Collector Emitter Breakdown (Max)120 V

Pricing

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CAD

3D models and CAD resources for this part