JANHCB2N3439
Active350 V POWER BJT DIE ROHS COMPLIANT: YES
JANHCB2N3439
Active350 V POWER BJT DIE ROHS COMPLIANT: YES
Description
General part information
JANHCB2N3439-Transistor-Die Series
This specification covers the performance requirements for NPN, silicon, low-power, high voltage 2N3439, 2N3439L, 2N3439UA, 2N3439U4, 2N3439UB, 2N3440, 2N3440L, 2N3440UA, 2N3440U4 and 2N3440UB transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device types as specified in MIL-PRF-19500/368 and two levels of product assurance (JANHC and JANKC) for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
Technical Specifications
Parameters and characteristics for this part
| Specification | JANHCB2N3439 |
|---|---|
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 2 µA |
| DC Current Gain (hFE) (Min) | 40 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Package Name | TO-39 (TO-205AD) |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500, 368 |
| Transistor Type | NPN |
| Vce Saturation (Max) | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources