BPW76B

Active

Vishay General Semiconductor - Diodes Division

PHOTOTRANSISTOR 450 TO 1080 NM

Search across all available documentation for this part.

Active

Vishay General Semiconductor - Diodes Division

PHOTOTRANSISTOR 450 TO 1080 NM

Technical Specifications

Parameters and characteristics for this part

Specification	BPW76B

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Dark (Id) (Max) [Max]	100 nA
Mounting Type	Through Hole
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Orientation	Top View
Package / Case	TO-18-3 Metal Can, TO-206AA
Power - Max [Max]	250 mW
Viewing Angle	80 °
Voltage - Collector Emitter Breakdown (Max) [Max]	70 V
Wavelength	850 nm

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Orientation	Current - Dark (Id) (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Viewing Angle	Wavelength	Power - Max [Max]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]
Vishay General Semiconductor - Diodes Division BPW76B	70 V	Top View	100 nA	Through Hole	50 mA	80 °	850 nm	250 mW	TO-18-3 Metal Can TO-206AA	125 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Phototransistors 850nm Top View TO-206AA, TO-18-3 Metal Can

Technical documentation and resources