TSM076NH04DCR RLG

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Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 14A 8PDFNU

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Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 14A 8PDFNU

Technical Specifications

Parameters and characteristics for this part

Specification	TSM076NH04DCR RLG

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	34 A, 14 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	1217 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max [Max]	55.6 W
Rds On (Max) @ Id, Vgs	7.6 mOhm
Supplier Device Package	8-PDFNU (5x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3.6 V

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Power - Max [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
Taiwan Semiconductor Corporation TSM076NH04DCR RLG	14 A 34 A	8-PowerTDFN	7.6 mOhm	40 V	8-PDFNU (5x6)	55.6 W	Surface Mount	-55 °C	175 ░C	MOSFET (Metal Oxide)	1217 pF	2 N-Channel (Dual)	3.6 V	19 nC

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General part information

Mosfet Array 40V 14A (Ta), 34A (Tc) 55.6W (Tc) Surface Mount 8-PDFNU (5x6)

Technical documentation and resources