IXYT85N120A4HV

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IXYS

IGBT PT 1200V 300A TO268HV

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IXYS

IGBT PT 1200V 300A TO268HV

Technical Specifications

Parameters and characteristics for this part

Specification	IXYT85N120A4HV

Current - Collector Pulsed (Icm)	520 A
Gate Charge	200 nC
IGBT Type	PT
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power - Max [Max]	1150 W
Reverse Recovery Time (trr)	40 ns
Supplier Device Package	TO-268HV (IXYT)
Switching Energy	8.3 mJ, 4.9 mJ
Td (on/off) @ 25°C	40 ns, 400 ns
Test Condition	15 V, 600 V, 60 A, 5 Ohm
Vce(on) (Max) @ Vge, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Td (on/off) @ 25°C	Supplier Device Package	Power - Max [Max]	Test Condition	Current - Collector Pulsed (Icm)	Switching Energy	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Reverse Recovery Time (trr)	Gate Charge	IGBT Type	Mounting Type	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]
IXYS IXYT85N120A4HV	40 ns 400 ns	TO-268HV (IXYT)	1150 W	5 Ohm 15 V 60 A 600 V	520 A	4.9 mJ 8.3 mJ	-55 °C	175 ░C	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	40 ns	200 nC	PT	Surface Mount	1.8 V	1200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT PT 1200 V 300 A 1150 W Surface Mount TO-268HV (IXYT)

Technical documentation and resources

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