AOW190A60C

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 20A TO262

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 20A TO262

Technical Specifications

Parameters and characteristics for this part

Specification	AOW190A60C

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds	1935 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	208 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.6 V

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs
Alpha & Omega Semiconductor Inc. AOW190A60C	4.6 V	208 W	20 V	N-Channel	190 mOhm	1935 pF	10 V	I2PAK TO-262-3 Long Leads TO-262AA	20 A	MOSFET (Metal Oxide)	Through Hole	-55 °C	150 °C	TO-262	600 V	34 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 1.46

General part information

N-Channel 600 V 20A (Tc) 208W (Tc) Through Hole TO-262

Technical documentation and resources