SSM6N16FE,L3F

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A ES6

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A ES6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6N16FE,L3F

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	9.3 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	150 mW
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.1 V

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Package / Case	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Power - Max [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage SSM6N16FE,L3F	MOSFET (Metal Oxide)	9.3 pF	2 N-Channel (Dual)	SOT-563 SOT-666	150 °C	100 mA	1.1 V	Surface Mount	ES6	150 mW	20 V	3 Ohm

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General part information

Mosfet Array 20V 100mA (Ta) 150mW (Ta) Surface Mount ES6

Technical documentation and resources