STD7NM80-1

Obsolete

STMicroelectronics

MOSFET N-CH 800V 6.5A IPAK

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Obsolete

STMicroelectronics

MOSFET N-CH 800V 6.5A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STD7NM80-1

Current - Continuous Drain (Id) @ 25°C	6.5 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds	620 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	1.05 Ohm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature
STMicroelectronics STD7NM50N	25 V	500 V	12 nC	780 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	45 W	400 pF	10 V	N-Channel	-55 °C	150 °C	Surface Mount	5 A	4 V	MOSFET (Metal Oxide)
STMicroelectronics STD7N52DK3	30 V	525 V			DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	90 W	870 pF	10 V	N-Channel			Surface Mount	6 A	4.5 V	MOSFET (Metal Oxide)	1.15 Ohm	150 °C
STMicroelectronics STD7NM80-1	30 V	800 V	18 nC		IPAK TO-251-3 Short Leads TO-251AA	TO-251 (IPAK)	90 W	620 pF	10 V	N-Channel	-55 °C	150 °C	Through Hole	6.5 A	5 V	MOSFET (Metal Oxide)	1.05 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 6.5A (Tc) 90W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources