IPB260N06N3GATMA1

Obsolete

Infineon Technologies

MOSFET N-CH 60V 27A D2PAK

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Obsolete

Infineon Technologies

MOSFET N-CH 60V 27A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IPB260N06N3GATMA1

Current - Continuous Drain (Id) @ 25°C	27 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	36 W
Rds On (Max) @ Id, Vgs	25.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Vgs (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Technology
Infineon Technologies IPB260N06N3GATMA1	N-Channel	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	4 V	10 V	25.7 mOhm	60 V	1200 pF	27 A	36 W	Surface Mount	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 27A (Tc) 36W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources