IXFX48N50Q

IXYS

MOSFET N-CH 500V 48A PLUS247-3

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IXYS

MOSFET N-CH 500V 48A PLUS247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX48N50Q

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	190 nC
Input Capacitance (Ciss) (Max) @ Vds	7000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max) [Max]	Vgs (Max)	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)
IXYS IXFX48N60Q3	6.5 V	-55 °C	150 °C	10 V	MOSFET (Metal Oxide)	1000 W	30 V	PLUS247™-3	N-Channel	140 mOhm	Through Hole	600 V	TO-247-3 Variant	48 A	140 nC	7020 pF
IXYS IXFX48N50Q		-55 °C	150 °C	10 V	MOSFET (Metal Oxide)		20 V	PLUS247™-3	N-Channel	100 mOhm	Through Hole	500 V	TO-247-3 Variant	48 A	190 nC	7000 pF	4 V	500 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 14.01

General part information

N-Channel 500 V 48A (Tc) 500W (Tc) Through Hole PLUS247™-3

Technical documentation and resources

No documents available