IXFP16N50P3

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IXYS

MOSFET N-CH 500V 16A TO220AB

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IXYS

MOSFET N-CH 500V 16A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXFP16N50P3

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	1515 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	330 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs
IXYS IXFP16N50P3	MOSFET (Metal Oxide)	360 mOhm	1515 pF	Through Hole	5 V	500 V	N-Channel	-55 °C	150 °C	16 A	TO-220-3	TO-220-3	30 V	330 W	10 V	29 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 16A (Tc) 330W (Tc) Through Hole TO-220-3

Technical documentation and resources

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