SUM50P10-42-E3

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 36A TO263

Search across all available documentation for this part.

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 36A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM50P10-42-E3

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Input Capacitance (Ciss) (Max) @ Vds	4600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	125 W, 18.8 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Technology	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case
Vishay General Semiconductor - Diodes Division SUM50P10-42-E3	MOSFET (Metal Oxide)	18.8 W 125 W	-55 °C	150 °C	TO-263 (D2PAK)	4.2 mOhm	160 nC	N-Channel	20 V	4.5 V 10 V	3 V	100 V	36 A	4600 pF	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 36A (Tc) 18.8W (Ta), 125W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources