Beta
⌘K
MOSFET N-CH 100V 36A TO263
| Part | Technology | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 18.8 W 125 W | -55 °C | 150 °C | TO-263 (D2PAK) | 4.2 mOhm | 160 nC | N-Channel | 20 V | 4.5 V 10 V | 3 V | 100 V | 36 A | 4600 pF | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB |