STPSC1006D

LTB

STMicroelectronics

DIODE SIL CARB 600V 10A TO220AC

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LTB

STMicroelectronics

DIODE SIL CARB 600V 10A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	STPSC1006D

Capacitance @ Vr, F	650 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	300 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.75 V

Part	Mounting Type	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Technology	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Capacitance @ Vr, F	Supplier Device Package	Current - Reverse Leakage @ Vr
STMicroelectronics STPSC1006G-TR	Surface Mount	10 A	600 V	No Recovery Time	SiC (Silicon Carbide) Schottky	1.7 V	0 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-40 °C	175 ░C	650 pF	D2PAK	150 µA
STMicroelectronics STPSC1006D	Through Hole	10 A	600 V	No Recovery Time	SiC (Silicon Carbide) Schottky	1.75 V	0 ns	TO-220-2	-40 °C	175 ░C	650 pF	TO-220AC	300 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 10A Through Hole TO-220AC

Technical documentation and resources