CRG09A,LQ(M

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Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A S-FLAT

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Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A S-FLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CRG09A,LQ(M

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOD-123F
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	S-FLAT (1.6x3.5)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Speed	Speed	Package / Case	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package
Toshiba Semiconductor and Storage CRG09A,LQ(M	1.1 V	Surface Mount	150 °C	1 A	5 µA	Standard Recovery >500ns	200 mA	SOD-123F	Standard	400 V	S-FLAT (1.6x3.5)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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General part information

Diode 400 V 1A Surface Mount S-FLAT (1.6x3.5)

Technical documentation and resources