IPD50R650CEATMA1

Obsolete

Infineon Technologies

MOSFET N-CH 500V 6.1A TO252-3

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

IPD50R650CEATMA1

Obsolete

Infineon Technologies

MOSFET N-CH 500V 6.1A TO252-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD50R650CEATMA1

Current - Continuous Drain (Id) @ 25°C	6.1 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	13 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	342 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Rds On (Max) @ Id, Vgs	650 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPD50R Series

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [custom]	Vgs(th) (Max) @ Id [Max]
Infineon Technologies IPD50R380CEBTMA1	PG-TO252-3	380 mOhm	-55 °C	150 °C	584 pF	3.5 V	MOSFET (Metal Oxide)	14.1 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	24.8 nC	500 V	73 W	20 V	Surface Mount	13 V
Infineon Technologies IPD50R520CP	PG-TO252-3-11		-55 °C	150 °C	680 pF	3.5 V	MOSFET (Metal Oxide)	7.1 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	17 nC	500 V		20 V	Surface Mount	10 V	520 mOhm	66 W
Infineon Technologies IPD50R500CEATMA1	PG-TO252-3	500 mOhm	-55 °C	150 °C	433 pF	3.5 V	MOSFET (Metal Oxide)	7.6 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel		500 V		20 V	Surface Mount	13 V		57 W	18.7 nC
Infineon Technologies IPD50R950CEBTMA1	PG-TO252-3-11	950 mOhm	-55 °C	150 °C	231 pF	3.5 V	MOSFET (Metal Oxide)	4.3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	10.5 nC	500 V		20 V	Surface Mount	13 V		34 W
Infineon Technologies IPD50R800CEBTMA1	PG-TO252-3	800 mOhm	-55 °C	150 °C		3.5 V	MOSFET (Metal Oxide)	5 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	12.4 nC	500 V		20 V	Surface Mount	13 V		40 W		280 pF
Infineon Technologies IPD50R380CEAUMA1	PG-TO252-3	380 mOhm	-55 °C	150 °C	584 pF	3.5 V	MOSFET (Metal Oxide)	14.1 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	24.8 nC	500 V	98 W	20 V	Surface Mount	13 V
Infineon Technologies IPD50R650CEATMA1	PG-TO252-3	650 mOhm	-55 °C	150 °C		3.5 V	MOSFET (Metal Oxide)	6.1 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel		500 V		20 V	Surface Mount	13 V				342 pF
Infineon Technologies IPD50R950CEATMA1	PG-TO252-3	950 mOhm	-55 °C	150 °C	231 pF	3.5 V	MOSFET (Metal Oxide)	4.3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	10.5 nC	500 V		20 V	Surface Mount	13 V		53 W
Infineon Technologies IPD50R280CEATMA1	PG-TO252-3	280 mOhm	-55 °C	150 °C	773 pF		MOSFET (Metal Oxide)	13 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel		500 V	119 W	20 V	Surface Mount	13 V					32.6 nC	3.5 V
Infineon Technologies IPD50R800CEATMA1	PG-TO252-3	800 mOhm	-55 °C	150 °C		3.5 V	MOSFET (Metal Oxide)	5 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	12.4 nC	500 V		20 V	Surface Mount	13 V		60 W		280 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPD50R Series

N-Channel 500 V 6.1A (Tc) 69W (Tc) Surface Mount PG-TO252-3

Documents

Technical documentation and resources