SUM45N25-58-E3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 250V 45A TO263

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 250V 45A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM45N25-58-E3

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC
Input Capacitance (Ciss) (Max) @ Vds	5000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.75 W, 375 W
Rds On (Max) @ Id, Vgs	58 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
Vishay General Semiconductor - Diodes Division SUM45N25-58-E3	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	5000 pF	-55 °C	175 ░C	4 V	250 V	TO-263 (D2PAK)	MOSFET (Metal Oxide)	6 V 10 V	3.75 W 375 W	58 mOhm	140 nC	N-Channel	45 A	30 V

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General part information

N-Channel 250 V 45A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources