Zenode.ai Logo
Beta
⌘K
Log InSign Up
STU4N52K3 - STU4N52K3

STU4N52K3

Active
STMicroelectronics

N-CHANNEL 525 V, 2.5 A, 2.1 OHM TYP., SUPERMESH3(TM) POWER MOSFET IN IPAK PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDS7026+17
STU4N52K3 - STU4N52K3

STU4N52K3

Active
STMicroelectronics

N-CHANNEL 525 V, 2.5 A, 2.1 OHM TYP., SUPERMESH3(TM) POWER MOSFET IN IPAK PACKAGE

Deep-Dive with AI

DocumentsDS7026+17

Technical Specifications

Parameters and characteristics for this part

SpecificationSTU4N52K3
Current - Continuous Drain (Id) @ 25°C2.5 A
Drain to Source Voltage (Vdss)525 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]11 nC
Input Capacitance (Ciss) (Max) @ Vds334 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseIPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)45 W
Rds On (Max) @ Id, Vgs2.6 Ohm
Supplier Device PackageIPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.52
75$ 0.91
150$ 0.75
525$ 0.63
1050$ 0.57
2025$ 0.54
5025$ 0.50
10050$ 0.49

Description

General part information

STU4N52K3 Series

These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.