MMIX1F180N25T

Active

IXYS

MOSFET N-CH 250V 132A 24SMPD

Search across all available documentation for this part.

Active

IXYS

MOSFET N-CH 250V 132A 24SMPD

Technical Specifications

Parameters and characteristics for this part

Specification	MMIX1F180N25T

Current - Continuous Drain (Id) @ 25°C	132 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	23800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	24-PowerSMD, 21 Leads
Power Dissipation (Max)	570 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	24-SMPD
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)
IXYS MMIX1F180N25T	570 W	MOSFET (Metal Oxide)	10 V	24-SMPD	-55 °C	150 °C	5 V	23800 pF	24-PowerSMD 21 Leads	Surface Mount	13 mOhm	132 A	N-Channel	20 V	250 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 32.63

General part information

N-Channel 250 V 132A (Tc) 570W (Tc) Surface Mount 24-SMPD

Technical documentation and resources

No documents available