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STL110N10F7 - PowerFlat™

STL110N10F7

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STMicroelectronics

N-CHANNEL 100 V, 5 MOHM TYP., 107 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE

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STL110N10F7 - PowerFlat™

STL110N10F7

Active
STMicroelectronics

N-CHANNEL 100 V, 5 MOHM TYP., 107 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL110N10F7
Current - Continuous Drain (Id) @ 25°C107 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs72 nC
Input Capacitance (Ciss) (Max) @ Vds5117 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)136 W
Rds On (Max) @ Id, Vgs6 mOhm
Supplier Device PackagePowerFlat™ (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.48
10$ 2.06
100$ 1.64
500$ 1.39
1000$ 1.18
Digi-Reel® 1$ 2.48
10$ 2.06
100$ 1.64
500$ 1.39
1000$ 1.18
Tape & Reel (TR) 3000$ 1.12
6000$ 1.08
9000$ 1.04
NewarkEach (Supplied on Cut Tape) 1$ 3.10
10$ 2.49
25$ 2.31
50$ 2.13
100$ 1.95
250$ 1.82
500$ 1.68
1000$ 1.59

Description

General part information

STL110N4F7AG Series

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.