SSM3K44FS,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 100MA SSM

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 100MA SSM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K44FS,LF

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8.5 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-75, SOT-416
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	4 Ohm
Supplier Device Package	SSM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.5 V

Part	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Operating Temperature	Supplier Device Package	Package / Case	FET Type	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
Toshiba Semiconductor and Storage SSM3K44FS,LF	4 V	2.5 V	1.5 V	Surface Mount	30 V	150 mW	150 °C	SSM	SC-75 SOT-416	N-Channel	MOSFET (Metal Oxide)	4 Ohm	8.5 pF	100 mA	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 100mA (Ta) 150mW (Ta) Surface Mount SSM

Technical documentation and resources