SSM5N16FU,LF

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A USV

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A USV

Technical Specifications

Parameters and characteristics for this part

Specification	SSM5N16FU,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	9.3 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-70-5, 5-TSSOP, SOT-353
Power - Max	200 mW
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	USV
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.1 V

Part	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature	Configuration	Power - Max	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case
Toshiba Semiconductor and Storage SSM5N16FU,LF	MOSFET (Metal Oxide)	1.1 V	3 Ohm	Surface Mount	100 mA	USV	150 °C	2 N-Channel (Dual)	200 mW	9.3 pF	20 V	5-TSSOP SC-70-5 SOT-353

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General part information

Mosfet Array 20V 100mA (Ta) 200mW (Ta) Surface Mount USV

Technical documentation and resources