EPC23103ENGRT

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EPC

IC GAN EPOWER STAGE 100V 20A

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EPC

IC GAN EPOWER STAGE 100V 20A

Technical Specifications

Parameters and characteristics for this part

Specification	EPC23103ENGRT

Current - Output / Channel	25 A
Current - Peak Output	109 A
Fault Protection	Short Circuit, ESD, Over Voltage
Features	Bootstrap Circuit, Slew Rate Controlled
Interface	Logic
Load Type	Capacitive and Resistive
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	13-PowerWFQFN
Rds On (Typ)	7.6 mOhm
Technology	Gallium Nitride (GaN) FETs
Voltage - Load [Max]	80 V
Voltage - Load [Min]	10 V
Voltage - Supply [Max]	80 V
Voltage - Supply [Min]	10 VDC

IC GAN EPOWER STAGE 100V 20A

Part	Package / Case	Technology	Current - Output / Channel	Current - Peak Output	Operating Temperature [Min]	Operating Temperature [Max]	Interface	Load Type	Features	Fault Protection	Voltage - Load [Max]	Voltage - Load [Min]	Rds On (Typ)	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type
EPC EPC23103ENGRT	13-PowerWFQFN	Gallium Nitride (GaN) FETs	25 A	109 A	-40 °C	125 ¯C	Logic	Capacitive and Resistive	Bootstrap Circuit, Slew Rate Controlled	ESD, Over Voltage, Short Circuit	80 V	10 V	7.6 mOhm	10 VDC	80 V	Surface Mount, Wettable Flank

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Half Bridge Driver DC Motors, DC-DC Converters Gallium Nitride (GaN) FETs 13-WQFN-HR (3.5x5)

Technical documentation and resources