SSM14N956L,EFF

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 12V 20A TCSPED

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 12V 20A TCSPED

Technical Specifications

Parameters and characteristics for this part

Specification	SSM14N956L,EFF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	12 V
Gate Charge (Qg) (Max) @ Vgs	76 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	14-SMD, No Lead
Power - Max [Max]	1.33 W
Rds On (Max) @ Id, Vgs	1.35 mOhm
Supplier Device Package	TCSPED-302701
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.4 V

Part	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Configuration
Toshiba Semiconductor and Storage SSM14N956L,EFF	MOSFET (Metal Oxide)	TCSPED-302701	12 V	1.4 V	14-SMD No Lead	Surface Mount	76 nC	20 A	150 °C	1.33 W	1.35 mOhm	2 N-Channel (Dual)

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General part information

Mosfet Array 12V 20A (Ta) 1.33W (Ta) Surface Mount TCSPED-302701

Technical documentation and resources