IXFA7N60P3

Obsolete

IXYS

MOSFET N-CH 600V 7A TO263

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Obsolete

IXYS

MOSFET N-CH 600V 7A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	IXFA7N60P3

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13.3 nC
Input Capacitance (Ciss) (Max) @ Vds	705 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs [Max]	1.15 Ohm
Supplier Device Package	TO-263AA (IXFA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Supplier Device Package	Vgs (Max)	FET Type	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
IXYS IXFA7N60P3	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.15 Ohm	-55 °C	150 °C	7 A	600 V	13.3 nC	Surface Mount	TO-263AA (IXFA)	30 V	N-Channel	MOSFET (Metal Oxide)	180 W	10 V	705 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 7A (Tc) 180W (Tc) Surface Mount TO-263AA (IXFA)

Technical documentation and resources

No documents available