APTM20DHM16T3G

Obsolete

Microsemi Corporation

MOSFET 2N-CH 200V 104A SP3

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Obsolete

Microsemi Corporation

MOSFET 2N-CH 200V 104A SP3

Technical Specifications

Parameters and characteristics for this part

Specification	APTM20DHM16T3G

Configuration	2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C	104 A
Drain to Source Voltage (Vdss)	200 V
Gate Charge (Qg) (Max) @ Vgs	140 nC
Input Capacitance (Ciss) (Max) @ Vds	7220 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP3
Power - Max [Max]	390 W
Rds On (Max) @ Id, Vgs [Max]	19 mOhm
Supplier Device Package	SP3
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	5 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Configuration	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]
Microsemi Corporation APTM20AM05FTG	SP4	5 mOhm	40800 pF	1250 W	4 V	Chassis Mount	150 °C	-40 °C	SP4	2 N-Channel (Half Bridge)	1184 nC	333 A	MOSFET (Metal Oxide)	200 V
Microsemi Corporation APTM20DHM16T3G	SP3		7220 pF	390 W	5 V	Chassis Mount	150 °C	-40 °C	SP3	2 N-Channel (Dual) Asymmetrical	140 nC	104 A	MOSFET (Metal Oxide)	200 V	19 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 200V 104A 390W Chassis Mount SP3

Technical documentation and resources

No documents available