1N1199AR

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GeneSiC Semiconductor

DO-4 DIODES - GENERAL PURPOSE ROHS

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GeneSiC Semiconductor

DO-4 DIODES - GENERAL PURPOSE ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	1N1199AR

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-4
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V

Part	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Mounting Type	Speed	Speed	Supplier Device Package	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]
GeneSiC Semiconductor 1N1199AR	Reverse Polarity Standard	DO-203AA DO-4 Stud	1.1 V	200 C	-65 C	10 µA	Chassis Stud Mount	Standard Recovery >500ns	200 mA	DO-4	12 A	50 V

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General part information

Diode 50 V 12A Chassis, Stud Mount DO-4

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