AUIRF7734M2TR

Obsolete

Infineon Technologies

MOSFET N-CH 40V 17A DIRECTFET M2

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Obsolete

Infineon Technologies

MOSFET N-CH 40V 17A DIRECTFET M2

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF7734M2TR

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Input Capacitance (Ciss) (Max) @ Vds	2545 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	DirectFET™ Isometric M2
Power Dissipation (Max)	2.5 W, 46 W
Rds On (Max) @ Id, Vgs [Max]	4.9 mOhm
Supplier Device Package	DirectFET™ Isometric M2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies AUIRF7734M2TR	40 V	2545 pF	2.5 W 46 W	17 A	Surface Mount	-55 °C	175 ░C	4.9 mOhm	DirectFET™ Isometric M2	10 V	20 V	4 V	N-Channel	DirectFET™ Isometric M2	MOSFET (Metal Oxide)	72 nC
Infineon Technologies AUIRF7734M2TR	40 V	2545 pF	2.5 W 46 W	17 A	Surface Mount	-55 °C	175 ░C	4.9 mOhm	DirectFET™ Isometric M2	10 V	20 V	4 V	N-Channel	DirectFET™ Isometric M2	MOSFET (Metal Oxide)	72 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 17A (Ta) 2.5W (Ta), 46W (Tc) Surface Mount DirectFET™ Isometric M2

Technical documentation and resources