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STWA70N60DM2

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STMicroelectronics

N-CHANNEL 600 V, 37 OHM TYP., 66 A MDMESH DM2 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

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STWA70N60DM2

Active
STMicroelectronics

N-CHANNEL 600 V, 37 OHM TYP., 66 A MDMESH DM2 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTWA70N60DM2
Current - Continuous Drain (Id) @ 25°C66 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]120 nC
Input Capacitance (Ciss) (Max) @ Vds5508 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)446 W
Rds On (Max) @ Id, Vgs42 mOhm
Supplier Device PackageTO-247 Long Leads
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 600$ 7.33

Description

General part information

STWA70N60DM2 Series

This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge and time (Qrr, trr)combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.