SRT110H

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 1A TS-1

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 1A TS-1

Technical Specifications

Parameters and characteristics for this part

Specification	SRT110H

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	100 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	T-18, Axial
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	TS-1
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	800 mV

Part	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Grade	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Qualification	Current - Average Rectified (Io)
Taiwan Semiconductor Corporation SRT110H	Through Hole	100 V	Schottky	T-18 Axial	TS-1	100 µA	200 mA 500 ns	Automotive	150 °C	-55 °C	800 mV	AEC-Q101	1 A
Taiwan Semiconductor Corporation SRT110	Through Hole	100 V	Schottky	T-18 Axial	TS-1	100 µA	200 mA 500 ns		150 °C	-55 °C	800 mV		1 A

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General part information

Diode 100 V 1A Through Hole TS-1

Technical documentation and resources

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