IDH06SG60CXKSA1

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Infineon Technologies

DIODE SIL CARB 600V 6A TO220-2-2

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Infineon Technologies

DIODE SIL CARB 600V 6A TO220-2-2

Technical Specifications

Parameters and characteristics for this part

Specification	IDH06SG60CXKSA1

Capacitance @ Vr, F	130 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO220-2-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.3 V

Part	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Technology	Speed	Current - Average Rectified (Io)	Capacitance @ Vr, F	Package / Case
Infineon Technologies IDH06SG60CXKSA1	Through Hole	600 V	50 µA	175 ░C	-55 C	0 ns	2.3 V	PG-TO220-2-2	SiC (Silicon Carbide) Schottky	No Recovery Time	6 A	130 pF	TO-220-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 6A Through Hole PG-TO220-2-2

Technical documentation and resources