STL12N10F7

Obsolete

STMicroelectronics

MOSFET, N-CH, 100V, 44A, 150DEG C, 52W

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STL12N10F7

Obsolete

STMicroelectronics

MOSFET, N-CH, 100V, 44A, 150DEG C, 52W

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STL12N10F7

Current - Continuous Drain (Id) @ 25°C	44 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1820 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	52 W
Rds On (Max) @ Id, Vgs	13.3 mOhm
Supplier Device Package	PowerFlat™ (3.3x3.3)
Supplier Device Package [x]	3.3
Supplier Device Package [y]	3.3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

STL12N60M2 Series

N-channel 600 V, 390 mOhm typ., 6.4 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Technology	Rds On (Max) @ Id, Vgs [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package [x]	Supplier Device Package [y]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STL12N60M6	4.75 V	48 W	-55 °C	150 °C	PowerFlat™ (5x6) HV	600 V	10 V	N-Channel	Surface Mount	25 V	6.4 A	12.3 nC	8-PowerVDFN	MOSFET (Metal Oxide)	490 mOhm
STMicroelectronics STL12N10F7	4.5 V	52 W	-55 °C	150 °C	PowerFlat™ (3.3x3.3)	100 V	10 V	N-Channel	Surface Mount	20 V	44 A	30 nC	8-PowerVDFN	MOSFET (Metal Oxide)		13.3 mOhm	3.3	3.3	1820 pF
STMicroelectronics STL12N60M2	4 V	52 W	-55 °C	150 °C	PowerFlat™ (5x6) HV	600 V	10 V	N-Channel	Surface Mount	25 V	6.5 A		8-PowerVDFN	MOSFET (Metal Oxide)		495 mOhm			538 pF	16 nC
STMicroelectronics STL12P6F6	4 V	75 W	-55 °C	175 ░C	PowerFlat™ (5x6)	60 V	10 V	P-Channel	Surface Mount	20 V	4 A	6.4 nC	8-PowerVDFN	MOSFET (Metal Oxide)		160 mΩ			340 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Newark	Each (Supplied on Cut Tape)	1	$ 1.12

Description

General part information

STL12N60M2 Series

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Documents

Technical documentation and resources