Technical Specifications
Parameters and characteristics for this part
| Specification | SCT011H75G3AG |
|---|---|
| null | |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 20.62 | |
Description
General part information
SCT011H75G3AG Series
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Documents
Technical documentation and resources
Datasheet
DatasheetFlyers (5 of 9)
Conference Papers (5 of 8)
AN3152
Application NotesFlyers (5 of 9)
Conference Papers (5 of 8)
Flyers (5 of 9)
Conference Papers (5 of 8)
DS13942
Product SpecificationsTA0349
Technical Notes & ArticlesConference Papers (5 of 8)
Conference Papers (5 of 8)
AN4671
Application NotesConference Papers (5 of 8)
TN1225
Technical Notes & ArticlesTN1378
Technical Notes & ArticlesFlyers (5 of 9)
Flyers (5 of 9)
UM1575
User ManualsFlyers (5 of 9)
Flyers (5 of 9)
Flyers (5 of 9)
Flyers (5 of 9)
TN1224
Technical Notes & ArticlesConference Papers (5 of 8)
AN5355
Application NotesConference Papers (5 of 8)