IXFN30N120P
ActiveDISCRETE SEMICONDUCTOR MODULES 30 AMPS 1200V 0.35 RDS
IXFN30N120P
ActiveDISCRETE SEMICONDUCTOR MODULES 30 AMPS 1200V 0.35 RDS
Description
General part information
IXFN30 Series
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on), low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings
Technical Specifications
Parameters and characteristics for this part
| Specification | IXFN30N120P |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 30 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 310 nC |
| Input Capacitance (Ciss) (Max) | 19000 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Package Name | SOT-227B |
| Power Dissipation (Max) | 890 W |
| Rds On (Max) | 350 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 6.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
