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IRF135S203 - PG-TO263-3-2

IRF135S203

Active
Infineon Technologies

STRONGIRFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 8.4 MOHM;

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Search across all available documentation for this part.

DocumentsIR Part Numbering SystemDatasheet+1
IRF135S203 - PG-TO263-3-2

IRF135S203

Active
Infineon Technologies

STRONGIRFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 8.4 MOHM;

Deep-Dive with AI

DocumentsIR Part Numbering SystemDatasheet+1

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF135S203
Current - Continuous Drain (Id) @ 25°C129 A
Drain to Source Voltage (Vdss)135 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs270 nC
Input Capacitance (Ciss) (Max) @ Vds9700 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)441 W
Rds On (Max) @ Id, Vgs8.4 mOhm
Supplier Device PackagePG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.04
10$ 2.66
100$ 1.87
Digi-Reel® 1$ 4.04
10$ 2.66
100$ 1.87
Tape & Reel (TR) 800$ 1.46
1600$ 1.42
NewarkEach (Supplied on Cut Tape) 1$ 3.33
10$ 2.49
25$ 2.45
50$ 2.14
100$ 1.83
250$ 1.82
500$ 1.56
1600$ 1.47

Description

General part information

IRF135 Series

Infineon’s latest 135 V StrongIRFET™ power MOSFET devices offer low RDS(on), robustness, reliablility and cost effectiveness for battery powered applications.