DXTN03100CFG-7

Active

Diodes Inc

100V NPN LOW VCESAT TRANSISTOR IN

Search across all available documentation for this part.

Active

Diodes Inc

100V NPN LOW VCESAT TRANSISTOR IN

Technical Specifications

Parameters and characteristics for this part

Specification	DXTN03100CFG-7

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	140 MHz
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	1.2 W
Supplier Device Package	PowerDI3333-8 (SWP) Type UX
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	220 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

NPN, 100V, 6A. PowerDI3333-8

Part	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
Diodes Inc DXTN03100CFG-7	20 nA	140 MHz	1.2 W	100 V	5 A	200	220 mV	NPN	Surface Mount Wettable Flank	8-PowerVDFN	-55 °C	150 °C	PowerDI3333-8 (SWP) Type UX

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN, 100V, 6A. PowerDI3333-8

Technical documentation and resources