BCR10PNH6727XTSA1

Infineon Technologies

TRANS DIGITAL BJT NPN/PNP 50V 0.1A 250MW 6-PIN SOT-363 T/R AUTOMOTIVE AEC-Q101

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Infineon Technologies

TRANS DIGITAL BJT NPN/PNP 50V 0.1A 250MW 6-PIN SOT-363 T/R AUTOMOTIVE AEC-Q101

Technical Specifications

Parameters and characteristics for this part

Specification	BCR10PNH6727XTSA1

Current - Collector (Ic) (Max) [Max]	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 hFE
Frequency - Transition	130 MHz
Mounting Type	Surface Mount
Package / Case	6-VSSOP, SC-88, SOT-363
Power - Max [Max]	250 mW
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	PG-SOT363-PO
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector (Ic) (Max) [Max]	Mounting Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce	Resistor - Emitter Base (R2)	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Frequency - Transition	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package
Infineon Technologies BCR10PNH6727XTSA1	100 mA	Surface Mount	6-VSSOP SC-88 SOT-363	30 hFE	10 kOhms	50 V	250 mW	130 MHz	1 NPN 1 PNP	300 mV	PG-SOT363-PO
Infineon Technologies BCR10PNE6327BTSA1	100 mA	Surface Mount	6-VSSOP SC-88 SOT-363	30 hFE	10 kOhms	50 V	250 mW	130 MHz	1 NPN 1 PNP	300 mV	PG-SOT363-PO

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-PO

Technical documentation and resources