STW20NK50Z

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STMicroelectronics

N-CHANNEL 500 V, 0.23 OHM, 20 A SUPERMESH(TM) POWER MOSFET ZENER-PROTECTED IN TO-247 PACKAGE

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DocumentsDatasheet Technical Data Sheet EN +1

STW20NK50Z

Active

STMicroelectronics

N-CHANNEL 500 V, 0.23 OHM, 20 A SUPERMESH(TM) POWER MOSFET ZENER-PROTECTED IN TO-247 PACKAGE

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW20NK50Z

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	119 nC
Input Capacitance (Ciss) (Max) @ Vds	2600 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STW20NK50Z Series

N-channel 500 V, 0.23 Ohm, 20 A SuperMESH(TM) Power MOSFET Zener-protected in TO-247 package

Part	Operating Temperature	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	FET Type
STMicroelectronics STW20NK50Z	150 °C	190 W	2600 pF	270 mOhm	TO-247-3	119 nC	Through Hole	10 V	30 V	MOSFET (Metal Oxide)	4.5 V	17 A	500 V	TO-247-3	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.90
		10	$ 3.25
		100	$ 2.31
		500	$ 1.91
		1000	$ 1.78
		2000	$ 1.77
Newark	Each	1	$ 5.07
		10	$ 4.30
		100	$ 2.89
		500	$ 2.72
		1200	$ 2.54
		3000	$ 2.40

Description

General part information

STW20NK50Z Series

This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Documents

Technical documentation and resources

Datasheet

Technical Data Sheet EN

Datasheet

Product Change Notice EN

Datasheet