STW20NK50Z Series

N-channel 500 V, 0.23 Ohm, 20 A SuperMESH(TM) Power MOSFET Zener-protected in TO-247 package

Catalog

N-channel 500 V, 0.23 Ohm, 20 A SuperMESH(TM) Power MOSFET Zener-protected in TO-247 package

Part	Operating Temperature	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	FET Type
STMicroelectronics STW20NK50Z	150 °C	190 W	2600 pF	270 mOhm	TO-247-3	119 nC	Through Hole	10 V	30 V	MOSFET (Metal Oxide)	4.5 V	17 A	500 V	TO-247-3	N-Channel

Catalog

N-channel 500 V, 0.23 Ohm, 20 A SuperMESH(TM) Power MOSFET Zener-protected in TO-247 package

Description

This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.