APT2X41DC120J

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Microsemi Corporation

DIODE MOD SIC 1200V 40A SOT227

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Microsemi Corporation

DIODE MOD SIC 1200V 40A SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	APT2X41DC120J

Current - Average Rectified (Io) (per Diode)	40 A
Current - Reverse Leakage @ Vr	800 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Package / Case	ISOTOP
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	SOT-227
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Technology	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Package / Case	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Speed	Reverse Recovery Time (trr)	Diode Configuration
Microsemi Corporation APT2X41DC120J	SiC (Silicon Carbide) Schottky	40 A	800 µA	ISOTOP	1.8 V	SOT-227	1.2 kV	Chassis Mount	No Recovery Time	0 ns	2 Independent
Microsemi Corporation APT2X41DC60J	SiC (Silicon Carbide) Schottky	40 A	800 µA	ISOTOP	1.8 V	SOT-227	600 V	Chassis Mount	No Recovery Time	0 ns	2 Independent

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 2 Independent 1200 V 40A Chassis Mount ISOTOP

Technical documentation and resources