DXTP58100CFDB-7

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Diodes Inc

TRANS PNP 100V 2A UDFN2020-3

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Diodes Inc

TRANS PNP 100V 2A UDFN2020-3

Technical Specifications

Parameters and characteristics for this part

Specification	DXTP58100CFDB-7

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160 hFE
Frequency - Transition	135 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-UDFN Exposed Pad
Power - Max [Max]	690 mW
Supplier Device Package	U-DFN2020-3 (Type B)
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	185 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

PNP, 100V, 2A, DFN2020-3

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Transistor Type	Package / Case	Mounting Type	Power - Max [Max]
Diodes Inc DXTP58100CFDB-7	100 V	185 mV	135 MHz	2 A	100 nA	-55 °C	150 °C	160 hFE	U-DFN2020-3 (Type B)	PNP	3-UDFN Exposed Pad	Surface Mount	690 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP, 100V, 2A, DFN2020-3

Technical documentation and resources