AOK125A60

Active

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 28A TO247

Search across all available documentation for this part.

Active

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 28A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	AOK125A60

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Input Capacitance (Ciss) (Max) @ Vds	2993 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	357 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case
Alpha & Omega Semiconductor Inc. AOK125A60	Through Hole	600 V	28 A	TO-247	357 W	39 nC	N-Channel	10 V	20 V	4.5 V	125 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	2993 pF	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 28A (Tc) 357W (Tc) Through Hole TO-247

Technical documentation and resources