IRF250P224
ActiveInfineon Technologies
POWER MOSFET, N CHANNEL, 250 V, 128 A, 0.009 OHM, TO-247AC, THROUGH HOLE
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IRF250P224
ActiveInfineon Technologies
POWER MOSFET, N CHANNEL, 250 V, 128 A, 0.009 OHM, TO-247AC, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRF250P224 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 96 A |
| Drain to Source Voltage (Vdss) | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 203 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 313 W |
| Rds On (Max) @ Id, Vgs | 12 mOhm |
| Supplier Device Package | TO-247AC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 9.66 | |
| 10 | $ 6.64 | |||
| 100 | $ 4.94 | |||
| 500 | $ 4.53 | |||
Description
General part information
IRF250 Series
Improved Gate, Avalanche and Dynamic dv/dt RuggednessFully Characterized Capacitance and Avalanche SOAEnhanced body diode dv/dt and di/dt CapabilityLead-Free, RoHS Compliant
Documents
Technical documentation and resources