CSD16321Q5T
Active25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 2.6 MOHM
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CSD16321Q5T
Active25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 2.6 MOHM
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | CSD16321Q5T | CSD16321 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A, 29 A | 29 - 100 A |
| Drain to Source Voltage (Vdss) | 25 V | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 3 V, 8 V | 3 - 8 V |
| FET Type | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC | 19 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3100 pF | 3100 pF |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN |
| Power Dissipation (Max) | 113 W, 3.1 W | 3.1 - 113 W |
| Rds On (Max) @ Id, Vgs | 2.4 mOhm | 2.4 mOhm |
| Supplier Device Package | 8-VSON-CLIP (5x6) | 8-VSON-CLIP (5x6) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V, -8 V | -8 - 10 V |
| Vgs(th) (Max) @ Id | 1.4 V | 1.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.01 | |
| 10 | $ 1.96 | |||
| 25 | $ 1.68 | |||
| 100 | $ 1.37 | |||
| Digi-Reel® | 1 | $ 3.01 | ||
| 10 | $ 1.96 | |||
| 25 | $ 1.68 | |||
| 100 | $ 1.37 | |||
| Tape & Reel (TR) | 250 | $ 1.22 | ||
| 500 | $ 1.13 | |||
| 750 | $ 1.08 | |||
| 1250 | $ 1.03 | |||
| 1750 | $ 1.00 | |||
| 2500 | $ 0.97 | |||
| 6250 | $ 0.90 | |||
| Texas Instruments | SMALL T&R | 1 | $ 1.56 | |
| 100 | $ 1.29 | |||
| 250 | $ 0.93 | |||
| 1000 | $ 0.70 | |||
CSD16321 Series
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm
| Part | FET Type | Mounting Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Vgs (Max) | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Supplier Device Package | Technology | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD16321Q5 | N-Channel | Surface Mount | 3.1 W | 3100 pF | 150 °C | -55 °C | 3 V, 8 V | 8-PowerTDFN | -8 V, 10 V | 2.4 mOhm | 25 V | 8-VSON-CLIP (5x6) | MOSFET (Metal Oxide) | 19 nC | 1.4 V | |
Texas Instruments CSD16321Q5T | N-Channel | Surface Mount | 3.1 W, 113 W | 3100 pF | 150 °C | -55 °C | 3 V, 8 V | 8-PowerTDFN | -8 V, 10 V | 2.4 mOhm | 25 V | 8-VSON-CLIP (5x6) | MOSFET (Metal Oxide) | 19 nC | 1.4 V | 29 A, 100 A |
Description
General part information
CSD16321 Series
This 25V, 1.9mΩ, 5mm × 6mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.
This 25V, 1.9mΩ, 5mm × 6mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.
Documents
Technical documentation and resources