AOB11S60L

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO263

Search across all available documentation for this part.

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	AOB11S60L

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	545 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	178 W
Rds On (Max) @ Id, Vgs	399 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.1 V

MOSFET N-CH 600V 11A TO263

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Vgs (Max)
Alpha & Omega Semiconductor Inc. AOB11S60L	545 pF	11 A	Surface Mount	10 V	N-Channel	178 W	4.1 V	600 V	-55 °C	150 °C	399 mOhm	MOSFET (Metal Oxide)	11 nC	TO-263 (D2PAK)	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$