IXGQ50N60B4D1

Obsolete

IXYS

IGBT 600V 100A 300W TO3P

Search across all available documentation for this part.

Obsolete

IXYS

IGBT 600V 100A 300W TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	IXGQ50N60B4D1

Current - Collector (Ic) (Max) [Max]	100 A
Current - Collector Pulsed (Icm)	230 A
Gate Charge	110 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	300 W
Reverse Recovery Time (trr)	25 ns
Supplier Device Package	TO-3P
Switching Energy	930 µJ, 1 mJ
Td (on/off) @ 25°C	330 ns, 37 ns
Test Condition	10 Ohm, 400 V, 15 V, 36 A
Vce(on) (Max) @ Vge, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Reverse Recovery Time (trr)	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Td (on/off) @ 25°C	IGBT Type	Gate Charge	Switching Energy	Package / Case	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C
IXYS IXGQ50N60B4D1	Through Hole	600 V	1.8 V	25 ns	TO-3P	100 A	10 Ohm 15 V 36 A 400 V	-55 °C	150 °C	300 W	37 ns 330 ns	PT	110 nC	1 mJ 930 µJ	SC-65-3 TO-3P-3	230 A
IXYS IXGQ50N60C4D1	Through Hole	600 V	2.3 V	25 ns	TO-3P	90 A	10 Ohm 15 V 36 A 400 V	-55 °C	150 °C	300 W		PT	113 nC	840 µJ 950 µJ	SC-65-3 TO-3P-3	220 A	40 ns 270 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT PT 600 V 100 A 300 W Through Hole TO-3P

Technical documentation and resources

No documents available