IGP06N60TXKSA1

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Infineon Technologies

600 V, 6 A TRENCHSTOP™ IGBT IN TO220 HOUSING. WITH A SWITCHING FREQUENCY RANGE FROM 2 KHZ TO 20 KHZ IT PERFECTLY MATCHES APPLICATIONS LIKE HOME APPLIANCES, MOTOR CONTROL AND DRIVES OR UNINTERRUPTIBLE POWER SUPPLY.

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IGP06N60TXKSA1

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Infineon Technologies

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IGP06N60TXKSA1

Current - Collector (Ic) (Max) [Max]	12 A
Gate Charge	42 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-220-3
Power - Max [Max]	88 W
Supplier Device Package	PG-TO220-3-1
Switching Energy	200 µJ
Td (on/off) @ 25°C	130 ns
Td (on/off) @ 25°C	9 ns
Vce(on) (Max) @ Vge, Ic	2.05 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

IGP06N60 Series

Part	Package / Case	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Switching Energy	IGBT Type	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
Infineon Technologies IGP06N60TXKSA1	TO-220-3	42 nC	600 V	Through Hole	12 A	2.05 V	130 ns	9 ns	200 µJ	Trench Field Stop	88 W	-40 C	175 °C	PG-TO220-3-1

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.79
		50	$ 0.85
		100	$ 0.76
		500	$ 0.60
		1000	$ 0.55
		2000	$ 0.51
		5000	$ 0.46
		10000	$ 0.45
Newark	Each	1	$ 1.71
		10	$ 1.24
		100	$ 0.83
		500	$ 0.71
		1000	$ 0.55
		2500	$ 0.53
		10000	$ 0.50

Description

General part information

IGP06N60 Series

Hard-switching 600 V, 6 A singleTRENCHSTOP™IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Documents

Technical documentation and resources

No documents available