TUAS3MH

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Taiwan Semiconductor Corporation

DIODE STANDARD 1000V 3A TO277A

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Taiwan Semiconductor Corporation

DIODE STANDARD 1000V 3A TO277A

Technical Specifications

Parameters and characteristics for this part

Specification	TUAS3MH

Capacitance @ Vr, F	24 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	3-PowerDFN, TO-277
Qualification	AEC-Q101
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-277A (SMPC4.6U)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Current - Average Rectified (Io)	Grade	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Capacitance @ Vr, F	Qualification	Mounting Type	Technology	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr
Taiwan Semiconductor Corporation TUAS3MH	3 A	Automotive	Standard Recovery >500ns	200 mA	1000 V	1.1 V	3-PowerDFN TO-277	24 pF	AEC-Q101	Surface Mount	Standard	TO-277A (SMPC4.6U)	150 °C	-55 °C	5 µA

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General part information

Diode 1000 V 3A Surface Mount TO-277A (SMPC4.6U)

Technical documentation and resources